NASA Technology Transfer Opportunity: X Ray Diffraction Method For Defect Characterization of Epitaxically Grown Semiconductor Layers
TECHNOLOGY TRANSFER OPPORTUNITY X RAY DIFFRACTION METHOD FOR DEFECT CHARACTERIZATION OF EPITAXIALLY GROWN CUBIC SEMICONDUCTOR LAYERS
Synopsis – Feb 27, 2012
General Information
Solicitation Number: N/A
Reference Number: TTO0965
Posted Date: Feb 27, 2012
FedBizOpps Posted Date: Feb 27, 2012
Recovery and Reinvestment Act Action: No
Original Response Date: Jun 01, 2012
Current Response Date: Jun 01, 2012
Classification Code: 99 — Miscellaneous
NAICS Code: 927110
Set-Aside Code:
Contracting Office Address
NASA/Langley Research Center, Mail Stop 12, Industry Assistance Office, Hampton, VA 23681-0001
Description
NASA Langley Research Center in Hampton, VA solicits interest from companies interested in obtaining license rights to commercialize, manufacture and market the following technology. License rights may be issued on an exclusive or nonexclusive basis and may include specific fields of use.
THE TECHNOLOGY:
NASA Langley researchers have developed a novel semiconductor epitaxial growth and characterization technology for rhombohedrally aligned cubic semiconductors on trigonal crystal substrates. Several important semiconductor materials are potentially affected by this technology, including cubic semiconductor alloys of Group IV materials such as silicon (Si), germanium (Ge), carbon (C) and its alloy SiGe, Group III-V materials such as gallium arsenide (GaAs) and gallium phosphate (GaP), and Group II-VI materials such as zinc selenide (ZnSe) and cadmium telluride (CdTe) on various new trigonal substrates. Many of these semiconductor materials are being used or developed for a number of high power, high frequency, optical fiber communication, far-infrared imaging, and high temperature device applications, including cellular communications as one example. This characterization method enables mapping of defect density and defect location, allowing optimization of growth process parameters for fabricating high-quality, defect-free semiconductor devices.
To express interest in this opportunity, please respond to Sean Sullivan, Research Triangle International (RTI), at: NASA Langley Research Center, Strategic Relationships Office (SRSO), 17 West Taylor St., Mail Stop 218, Building 1212, Room 110 Hampton, Virginia, E-mail: Sean.D.Sullivan@NASA.gov, or phone: 757-864-5055. Please indicate the date and title of the FBO notice and include your company and contact information.
RTI is responsible for aggregating and acknowledging all responses. These responses are provided to members of NASA Langley’s Innovative Partnerships Office within the SRO for the purpose of promoting public awareness of our technology products, and conducting preliminary market research to determine public interest in and potential for future licensing opportunities. If direct licensing interest results from this posting, SRO will follow the formal licensing process of posting in the Federal Register as required. No follow-on procurement is expected to result from responses to this Notice.
Point of Contact
Name: Sean Sullivan
Title: Media Specialist
Phone: 757-864-5055
Fax: 757-864-8101
Email: sean.d.sullivan@nasa.gov
