Mitsubishi Electric to Expand Range of Ku-band GaN-HEMT Lineup
Mitsubishi Electric
Mitsubishi Electric Corporation
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 12.75-13.25 GHz (Low-Ku band) 70W (48.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the company’s GaN HEMT lineup for satellite-communication (SATCOM) earth stations.
